Sign In | Join Free | My adobecards.com
China Shanghai GaNova Electronic Information Co., Ltd. logo
Shanghai GaNova Electronic Information Co., Ltd.
Semiconductor industry professional one-stop procurement platform, to provide you with superior quality and diversity of products and technical services
Active Member

4 Years

Home > Laser Diode Chip >

Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%

Shanghai GaNova Electronic Information Co., Ltd.
Contact Now

Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%

Brand Name : GaNova

Place of Origin : Suzhou China

Payment Terms : T/T

Packaging Details : Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.

Type : Laser Diode

Application : Laser Printing

Package Type : Surface Mount, Standard Package

Operating Temperature : 15-55℃

Wavelength : 915nm

Emitter Size : 94μm

Threshold Current : 0.5A

Power Conversion Efficiency : 58%

Contact Now

Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%

915nm 10W COS Diode Laser Chip On Submount Design


On-chip integration of laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%.

The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.

Optical
Center Wavelength
915nm
Output Power
10W
Spectral Width FWHM
≤6nm
Slope Efficiency
1.0W/A
Fast Axis Divergence
60Deg
Slow Axis Divergence
11Deg
Polarization Mode
TE
Emitter Size
94um
Electrical
Threshold Current
0.5A
Operating Current
12A
Operating Voltage
1.65V
Power Conversion Efficiency
58%
Thermal
Operating Temperature
15-55℃
Storage Temperature
-30-70℃
Wavelength Temp. Coefficient
0.3nm/℃
Drawing

Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%

FAQ

Q1: What payment methods do you support?
T/T and Western Union, For your Choice

Q2: How long can I receive the package?
Normally 1-2 Weeks FedEx,DHL Express,UPS,TNT

Q3: What is the lead time?
Standard product are all in stock. Shipping via Express within 3~4 working days. Customized stack need 15 working days.

Q4: Are you trading company or manufacturer?
We are manufacturer with more than 11 years of experience, and also provide the technical solution to all customers.

Q5: Can you guarantee your quality?
Of course, we are one of top reputed manufacturers in China. Quality for us is the most important thing, we put high value on our reputation. Best quality is our principle all the time.


Product Tags:

0.5A Laser Diode Chip

      

915nm diode chips

      

Laser Diode Chip 10W

      
 Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58% Manufactures

Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58% Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shanghai GaNova Electronic Information Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)